We present results of our investigations on nickel silicidation of top-down fabricated\nsilicon nanowires (SiNWs). Control over the silicidation process is important for the application\nof SiNWs in reconfigurable field-effect transistors. Silicidation is performed using a rapid thermal\nannealing process on the SiNWs fabricated by electron beam lithography and inductively-coupled\nplasma etching. The effects of variations in crystallographic orientations of SiNWs and different\nNW designs on the silicidation process are studied. Scanning electron microscopy and transmission\nelectron microscopy are performed to study Ni diffusion, silicide phases, and silicide -silicon interfaces.\nControl over the silicide phase is achieved together with atomically sharp silicide -silicon interfaces.\nWe find that {111} interfaces are predominantly formed, which are energetically most favorable\naccording to density functional theory calculations. However, control over the silicide length remains\na challenge.
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